Growth of GaInP by epitaxy can be complicated by the tendency of GaInP to grow as an ordered material, rather than a truly random solid solution (i.e., a mixture). A method is provided for relatively low-temperature epitaxial growth of a tunnel junction and a subcell over the tunnel junction at temperatures which leave intact the desirable.
Ī different composition of GaInP, lattice matched to the underlying GaInAs, is utilized as the high energy junction GaInP/GaInAs/Ge triple junction photovoltaic cells. A monolithic, tandem photovoltaic device is provided having an indium phosphide tunnel junction lattice-matched to adjoining subcells and having high peak current densities and low electrical resistance. Recent years have shown GaInP/GaAs tandem solar cells with AM0 (sunlight incidence in space=1.35 kW/m 2) efficiencies in excess of 25%. Ga 0.5In 0.5P is used as the high energy junction on double and triple junction photovoltaic cells grown on GaAs. red emitting (650 nm) RCLEDs or VCSELs for PMMA plastic optical fibers. This allows, in combination with (Al xGa 1−x) 0.5In 0.5, the growth of lattice matched quantum wells for red emitting semiconductor lasers, e.g. Ga 0.5In 0.5P is a solid solution of special importance, which is almost lattice matched to GaAs. Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide. Some semiconductor devices such as EFluor Nanocrystal use InGaP as their core particle. It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space applications and, in combination with aluminium ( AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. Indium gallium phosphide ( InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus.
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